|
Nano-Electronics & Interconnects
The
nano-electronics and interconnects group focuses
on research programs involved in the fabrication
of nano-structures for semiconductor applications,
the reliability study of copper interconnect
systems and packaging technology.
Research
in nano-structured materials includes materials
used for the 90nm node and beyond, such as rare-earth
materials for high-k gate dielectrics, polymeric
ultra low-k dielectrics, and metallic nano-wires
as interconnects.
Besides
standard thin film deposition techniques, advanced
fabrication methods such as templated
assembly, self-assembly and electrostatic atomization
are being studied for the development of nano-electronic
devices. Integration of on-chip copper interconnects
with low-k
dielectrics and advanced diffusion barrier systems
is actively researched.
Reliability
issues of advanced copper-based interconnect
systems such as electromigration, stress migration
and dielectric breakdown are also actively investigated.
Performance characterization, modeling and research
in advanced packaging technologies complement
the research in the areas of optoelectronic devices.
The
research group collaborates actively with Chartered
Semiconductor Manufacturing, Hynix Semiconductor,
AMR Technologies Inc. (Canada), the Institute
of Microelectronics, the Institute of Materials
Research and Engineering, and University of California
Los Angeles (UCLA).
Areas
Of Research :
- Nano-structured Interconnect Materials
- Materials & Process
Development for Nano-electronics
- Advanced Silicon Process Technology
- Process Integration & Reliability
- Semiconductor Devices & Packaging
- Active & Passive Devices
- Design & Modeling
- Microelectronics & Optoelectronics
Packaging
Typical
Research Projects:
Staff
members:

|