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Nano-Electronics & Interconnects
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Nano-Electronics & Interconnects

The nano-electronics and interconnects group focuses on research programs involved in the fabrication of nano-structures for semiconductor applications, the reliability study of copper interconnect systems and packaging technology.

Research in nano-structured materials includes materials used for the 90nm node and beyond, such as rare-earth materials for high-k gate dielectrics, polymeric ultra low-k dielectrics, and metallic nano-wires as interconnects.

Besides standard thin film deposition techniques, advanced fabrication methods such as templated assembly, self-assembly and electrostatic atomization are being studied for the development of nano-electronic devices. Integration of on-chip copper interconnects with low-k dielectrics and advanced diffusion barrier systems is actively researched.

Reliability issues of advanced copper-based interconnect systems such as electromigration, stress migration and dielectric breakdown are also actively investigated. Performance characterization, modeling and research in advanced packaging technologies complement the research in the areas of optoelectronic devices.

The research group collaborates actively with Chartered Semiconductor Manufacturing, Hynix Semiconductor, AMR Technologies Inc. (Canada), the Institute of Microelectronics, the Institute of Materials Research and Engineering, and University of California Los Angeles (UCLA).

Areas Of Research :

  • Nano-structured Interconnect Materials
  • Materials & Process Development for Nano-electronics
  • Advanced Silicon Process Technology
  • Process Integration & Reliability
  • Semiconductor Devices & Packaging
  • Active & Passive Devices
  • Design & Modeling
  • Microelectronics & Optoelectronics Packaging

 

Typical Research Projects:

Staff members:

 
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