Email:clgan@ntu.edu.sg
Phone: (+65) 67906821
Office: N4.1-02-18
Related Link: http://www.ntu.edu.sg/home/clgan 

Current Research Interests
His research area is in the study of advanced interconnect systems. He has investigated the reliability of sub-micron copper interconnects with newly designed test structures in different dielectric system. With the experimental characterization through electromigration testing, a new assessment methodology for circuit level reliability projection is being developed.

Another area of research is on the bonding and reliability of 3D interconnects. Test structures which allow the mechanical and electrical characterization of bonded copper interconnects are designed. This project will investigate the feasibility of integrating 3D interconnects into actual circuits.

Fabrication of nanowires as interconnects is also being investigated. Metallic and silicides-based nanowires are being formed by a template or self-assembly method. Work is carried out to characterize the properties of the nanowires to assess its suitability for actual applications. His research is done in collaboration with various institutions and companies, such as Massachusetts Institute of Technology, International Sematech, IBM (US), Institute of Microelectronics, Data Storage Institute and Chartered Semiconductor Manufacturing.

Biographical Information
He received his B.Eng (Electrical) from the National University of Singapore in 1999. He received his PhD in Advanced Materials for Micro- and Nano-Systems under the Singapore-MIT Alliance Program in 2003. He was awarded the Best Research Project during the graduation of the pioneer batch of SMA PhD students. His contribution in his research area was recognized through the award of the Best Paper in Reliability at the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits in 2002, and the Silver Award at the 2003 MRS Spring Meeting Graduate Student Award. He is currently an assistant professor at the School of Materials Science and Engineering at NTU.

Teaching

• MS3002 Advanced Materials Processing
• MS3003 Materials Failure

Selected Publications

C. V. Thompson, C. L. Gan, S. M. Alam and D. E. Troxel. "Experiments and Models for Circuit-Level Assessment of the Reliability of Cu Metallization," in Proceedings of International Interconnect Technology Conference, San Francisco, USA, June 2004. (Invited).

J. Lam, M. H. Hong, C. L. Gan, and T. C. Chong, "Synthesis, Characterization and Photoluminescence of Ga2O3 nanofibers," 5th International Symposium on Laser Precision Microfabrication, Nara, Japan, May 2004.

C. L. Gan, C. V. Thompson, K. L. Pey and W. K. Choi, "Experimental Characterization and Modeling of the Reliability of 3-Terminal Dual-Damascene Cu Interconnect Trees," Journal of Applied Physics, vol. 94, no. 2, p. 1222-1228, July 2003.

C. L. Gan, C. V. Thompson, K. L. Pey, W. K. Choi, C. W. Chang and Q. Guo, "Effect of Current Distribution on the Reliability of Multi-Terminal Cu Dual-Damascene Interconnect Trees," Proceedings for the 41st Annual International Reliability Physics Symposium, Dallas, USA, p. 594-595, March 2003.

C. L. Gan, F. Wei, C. V. Thompson, K. L. Pey, W. K. Choi, S. P. Hau-Riege and B. Yu, "Contrasting Failure Characteristics of Different Levels of Cu Dual-Damascene Metallization," Proceedings for the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, p. 124-128, July 2002.

C. L. Gan, C. V. Thompson, K. L. Pey, W. K. Choi, H. L. Tay, B. Yu and M. K. Radhakrishnan, "Effect of Current Direction on the Lifetime of Different Levels of Cu Dual-Damascene Metallization," Applied Physics Letter, vol. 79, no. 27, p. 4592-4594, December 2001.